Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
Method of manufacturing semiconductor device
US8994060B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994060-B2 |
| Application number | US-201113164893-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2011 |
| Priority date | Feb 2, 2007 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A light-emitting device comprising: an organic compound film; an inorganic insulating film over the organic compound film; a first electrode over the inorganic insulating film; a light-emitting layer over the first electrode; a second electrode over the light-emitting layer; an adhesive layer over the second electrode; a flexible substrate over the adhesive layer; and an integrated circuit between the organic compound film and the adhesive laye…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8994060B2 cover?
- An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic com…
- Who is the assignee on this patent?
- Jinbo Yasuhiro, Isa Toshiyuki, Honda Tatsuya, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3238. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).