Semiconductor light emitting device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-8994053-B2
Application number	US-201113171139-A
Country	US
Kind code	B2
Filing date	Jun 28, 2011
Priority date	Jun 22, 2007
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

First claim

The invention claimed is:

1. A light emitting device comprising:
a first conductive semiconductor layer;
an active layer formed on the first conductive semiconductor layer;
a second conductive semiconductor layer formed on the active layer;
an outer protection semiconductor layer formed at an outer circumference portion of the second conductive semiconductor layer, wherein the outer protection semiconductor layer is one of III-V group compound semiconductors;
a reflective…

Assignees

• Lee Sang Youl
• Lg Innotek Co Ltd

Inventors

• Lee Sang Youl

Classifications

• H10H20/835 Primary

  Electricity · mapped topic

• H10H20/84

  Electricity · mapped topic

• H10H20/018

  Electricity · mapped topic

• H10H20/825 Primary

  Electricity · mapped topic

• H01L33/32 Primary

  Electricity · mapped topic