Bonded wafer and method for producing bonded wafer
US-2024379899-A1 · Nov 14, 2024 · US
US8994040B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994040-B2 |
| Application number | US-201113992046-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 5, 2011 |
| Priority date | Dec 10, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
A method of producing an optoelectronic component including providing an epitaxially grown layer sequence on a growth substrate, which comprises a suitable layer for light emission; applying a metal layer to the epitaxially grown layer sequence; applying a molding support to the metal layer, the molding support including a support material with a first coefficient of thermal expansion and a fiber mesh with a second coefficient of thermal expansion functionally bonded to the support material; and detaching the growth substrate.
Opening claim text (preview).
The invention claimed is: 1. An arrangement of a plurality of optoelectronic components spaced apart from one another on a tape, the optoelectronic components comprising: an epitaxially grown layer sequence suitable for light emission in a main direction; a metal layer on a side of the epitaxially grown layer sequence remote from the main direction; and a molding support with a support material with a first coefficient of thermal expansion and with a fiber mesh with a second c…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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