Semiconductor device with heat removal structure and related production method

Patent metadata

Field	Value
Publication number	US-8994036-B2
Application number	US-201313864353-A
Country	US
Kind code	B2
Filing date	Apr 17, 2013
Priority date	Apr 17, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.

First claim

What is claimed is:

1. A semiconductor device composite structure which comprises an initial substrate with discrete, integrated device components and a heat removal structure, wherein the heat removal structure comprises:
a bond layer which is applied to the initial substrate or to the devices;
a heat removal layer which is applied to the bond layer, and consists of a material with at least double the specific heat conductivity of the average specific heat conductivity of the i…

Assignees

• Forschungsverbund Berlin Ev

Inventors

• KRÄMER Tomas

Classifications

• H10W40/25

  Electricity · mapped topic

• H10W70/02

  Electricity · mapped topic

• H10W40/254

  Electricity · mapped topic

• H10W40/228

  Electricity · mapped topic

• H10W40/22 Primary

  Electricity · mapped topic