Well Modulation for Defect Inspection
US-2024079278-A1 · Mar 7, 2024 · US
US8994026B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994026-B2 |
| Application number | US-201313774205-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2013 |
| Priority date | Jul 31, 2008 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Design structures, structures and methods of manufacturing structures for providing latch-up immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub structure embedded in a P-wafer and provided below a retrograde N-well to a non-isolated CMOS logic.
Opening claim text (preview).
What is claimed is: 1. A structure comprising a first dopant type structure embedded in a diffused deep structure formed of a same dopant type of the first dopant type structure, the first dopant type structure being a retrograde N-well and the diffused deep structure being a diffused N-Tub structure, the diffused deep structure being associated with a non-isolated CMOS logic, the diffused deep structure being embedded in a P-wafer and provided below the first dopant type structure…
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