Light-Effect Transistor (LET)
US-2017331251-A1 · Nov 16, 2017 · US
US8994025B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994025-B2 |
| Application number | US-92906410-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 28, 2010 |
| Priority date | Aug 9, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.
Opening claim text (preview).
What is claimed is: 1. A visible ray sensor, comprising: a substrate; a light blocking member disposed on the substrate; and a visible ray sensing thin film transistor disposed on the light blocking member and comprising a first gate insulating layer and a first gate electrode, wherein the first gate insulating layer is disposed on the light blocking member, which is under the first gate insulating layer, and comprises a first contact hole that exposes the light blocking mem…
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