Photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-8994009-B2
Application number	US-201213602352-A
Country	US
Kind code	B2
Filing date	Sep 4, 2012
Priority date	Sep 7, 2011
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound.

First claim

What is claimed is:

1. A photoelectric conversion device comprising:
a substrate;
a first electrode over the substrate;
a first light-transmitting semiconductor layer in direct contact with the first electrode;
a second light-transmitting semiconductor layer in direct contact with the first light-transmitting semiconductor layer;
a first semiconductor layer in direct contact with the second light-transmitting semiconductor layer;
a second semiconductor layer in direct co…

Assignees

• Asami Yoshinobu
• Kataishi Riho
• Semiconductor Energy Lab

Inventors

• Asami Yoshinobu
• Kataishi Riho

Classifications

• H10F77/311 Primary

  Electricity · mapped topic

• Y02E10/549

  Cross-Sectional Technologies · mapped topic

• H01L31/02167 Primary

  Electricity · mapped topic