Semiconductor light emitting device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-8993993-B2
Application number	US-201113104487-A
Country	US
Kind code	B2
Filing date	May 10, 2011
Priority date	May 11, 2010
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising:
a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer; and
a pattern disposed on at least one light emitting surface among the surfaces of the light emitting structure, the pattern having a plurality of convex or concave parts that are similar in shape, wherein:
the light emitting surface with the pattern thereon has a plurality of regions defined such that the regions are equal in size and are arranged linearly in a first direction and a second direction perpendicular to the first direction, and each of the regions has a substantially circular shape and is in contact with at least two regions adjacent thereto,
each of the convex or concave parts is disposed in a corresponding one of the plurality of regions such that a part of the edge of each convex or concave part is in contact with the outline of the corresponding region, and
first and second convex or concave parts arranged in the first direction, among the plurality of convex or concave parts, are sequentially disposed in first and second regions, among the plurality of regions, corresponding to the first and second convex or concave parts such that the edge part of the first convex or concave part in contact with the outline of the first region has a rotational position with respect to the center of the first region, clockwise or counterclockwise from a rotational position of the edge part of the second convex or concave part in contact with the outline of the second region with respect to the center of the second region, and
third and fourth convex or concave parts arranged in the second direction, among the plurality of convex or concave parts, are sequentially disposed in third and fourth regions, among the plurality of regions, corresponding to the third and fourth convex or concave parts such that the edge parts of the third and fourth convex or concave parts in contact with the outlines of the third and fourth regions have an identical rotational position with respect to the respective centers of the third and fourth regions.

2. The semiconductor light emitting device of claim 1 , wherein
the light emitting structure is disposed on a substrate, and
the pattern is disposed on the substrate.

3. The semiconductor light emitting device of claim 1 , wherein the pattern is disposed on the second-conductivity-type semiconductor layer.

4. The semiconductor light emitting device of claim 1 , wherein the pattern is disposed in a portion of the second-conductivity-type semiconductor layer.

5. The semiconductor light emitting device of claim 1 , wherein the second-conductivity-type semiconductor layer is doped with n-type or p-type impurities.

6. The semiconductor light emitting device of claim 1 , wherein the size of each region is equal to or greater than the size of a contact surface between the region and the convex or concave part disposed in each region.

7. The semiconductor light emitting device of claim 1 , wherein contact surfaces between the convex or concave parts and the corresponding regions have different sizes.

8. The semiconductor light emitting device of claim 7 , wherein:
the convex or concave parts are arranged in ascending order of the size of the contact surface with the corresponding regions to constitute a group, and
the group is disposed in a repeated manner.

9. The semiconductor light emitting device of claim 1 , wherein each region has a diameter of 0.1 μm to 5 μm.

10. The semiconductor light emitting device of claim 1 , wherein the contact surfaces between the convex or concave parts and the corresponding regions have a substantially circular shape.

11. The semiconductor light emitting device of claim 10 , wherein the contact surfaces between the convex or concave parts and the corresponding regions have a diameter of 0.1 μm to 5 μm.

12. The semiconductor light emitting device of claim 1 , wherein the convex or concave parts have a shape similar to one of a hemispherical shape and a conical shape.

13. The semiconductor light emitting device of claim 1 , wherein the contact surfaces between the convex or concave parts and the corresponding regions have the same shape.

14. The semiconductor light emitting device of claim 1 , wherein the particular regions are arranged in a row such that the centers of the particular regions are positioned along a same line.

15. The semiconductor light emitting device of claim 1 , wherein at least two of the plurality of convex or concave parts have different sizes.

16. The semiconductor light emitting device of claim 1 , wherein the convex or concave parts are arranged linearly only in one of the first and second directions.

17. The semiconductor light emitting device of claim 1 , wherein the convex or concave parts arranged in the first direction are sequentially disposed in irregular intervals and the convex or concave parts arranged in the second direction are sequentially disposed in a regular interval.

18. A method for fabricating a semiconductor light emitting device, comprising:
forming a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer on a growth substrate;
forming a conductive substrate on the light emitting structure;
removing the growth substrate; and
forming a pattern on at least one light emitting surface among surfaces of the light emitting structure exposed by removing the growth substrate, wherein:
the light emitting surface with the pattern formed thereon has a plurality of regions defined such that the regions are equal in size and are arranged linearly in a first direction and a second direction perpendicular to the first direction, and each of the regions has a substantially circular shape and is in contact with at least two regions adjacent thereto,
a plurality of convex or concave parts are disposed in the plurality of regions such that a part of the edge of each convex or concave part is in contact with the outline of a corresponding one of the plurality of regions,
first and second convex or concave parts arranged in the first direction, among the plurality of convex or concave parts, are sequentially disposed in first and second regions, among the plurality of regions, corresponding to the first and second convex or concave parts such that the edge part of the first convex or concave part in contact with the outline of the first region has a rotational position with respect to the center of the first region, clockwise or counterclockwise from a rotational position of the edge part of the second convex or concave part in contact with the outline of the second region with respect to the center of the second region,
third and fourth convex or concave parts arranged in the second direction, among the plurality of convex or concave parts, are sequentially disposed in third and fourth regions, among the plurality of regions, corresponding to the third and fourth convex or concave parts such that the edge parts of the third and fourth convex or concave parts in contact with the outlines of the third and fourth regions have an identical rotational position with respect to the respective centers of the third and fourth regions, and
the forming of the pattern is performed through a dry etching process.

19. A method for fabricating a semiconductor light emitting device, comprising:
forming a light emitting structure comprising a fir

Assignees

• Ko Hyung Duk
• Yang Jung Ja
• Kim Yu Seung
• Sung Youn Joon
• Jung Soo Jin
• Kim Dae Cheon
• Lee Byung Kwun
• Samsung Electronics Co Ltd

Inventors

• Ko Hyung Duk
• Yang Jung Ja
• Kim Yu Seung
• Sung Youn Joon
• Jung Soo Jin
• Kim Dae Cheon
• Lee Byung Kwun

Classifications

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title