Solid-state imaging device with plural CCD registers

Patent metadata

Field	Value
Publication number	US-8993950-B2
Application number	US-201313781582-A
Country	US
Kind code	B2
Filing date	Feb 28, 2013
Priority date	Aug 29, 2012
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

In an embodiment, each of first and second pixel rows has pixels. A first transfer gate is arranged between the first and second pixel rows. Second transfer gates are arranged adjacently to odd-numbered pixels of the second pixel row, respectively. Third transfer gates are arranged adjacently to even-numbered pixels of the second pixel row, respectively. A first CCD register is arranged adjacently to the second transfer gates and third transfer gates. Fourth transfer gates are arranged adjacently to odd-numbered accumulation gates of the first CCD register. A second CCD register is arranged adjacently to the fourth transfer gates. An output portion converts transferred charges into a voltage signal. A clear gate controls draining of the charges accumulated in the first pixel row to a first drain portion. A switch gate controls draining of charges transferred in a row direction in the second CCD register to a second drain portion.

First claim

What is claimed is:

1. A solid-state imaging device, comprising:
a first pixel row including pixels which convert incident light photoelectrically and accumulate acquired charges;
a second pixel row including pixels which convert incident light photoelectrically and accumulate acquired charges;
a first transfer gate arranged between the first pixel row and the second pixel row;
second transfer gates arranged adjacently to odd-numbered ones of the pixels of the second pixel r…

Assignees

• Toshiba Kk

Inventors

• Takahashi Masao

Classifications

• H04N25/713 Primary

  Electricity · mapped topic

• H10F39/80 Primary

  Electricity · mapped topic

• H04N5/37213

  Electricity · mapped topic

• H01L27/14806 Primary

  Electricity · mapped topic