Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
Chalcogenide-based materials and improved methods of making such materials
US8993882B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993882-B2 |
| Application number | US-201113047190-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2011 |
| Priority date | Mar 17, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.
First claim
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What is claimed is: 1. A method of making a selenium-containing photoabsorbing composition, comprising the steps of: (a) sputtering at least one target in the presence of one or more chalcogens comprising Se to form a Se-containing precursor of the chalcogen-containing photoabsorber wherein the Se-containing precursor includes a sub-stoichiometric amount of the one or more chalcogens comprising Se throughout the precursor or in selected areas of the precursor; and (b) while the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
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- What does patent US8993882B2 cover?
- The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalc…
- Who is the assignee on this patent?
- Gerbi Jennifer E, Langlois Marc G, Nilsson Robert T, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10F10/167. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).