Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
US8993878B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993878-B2 |
| Application number | US-201313961243-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2013 |
| Priority date | Aug 30, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.
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What is claimed is: 1. An electrode for a photovoltaic device, comprising: a Mo layer; and a sulfurization-resistant layer formed on the Mo layer, wherein: the sulfurization-resistant layer contains Mo and at least one element X selected from a group consisting of Nb, Ta, Au, V, Mn, and W, and a molar ratio of the element X to the Mo contained in the sulfurization-resistant layer satisfies X/(Mo+X)>about 0.5. 2. The electrode according to claim 1 ,…
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