Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
Solar cell and method for manufacturing the same
US8993876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993876-B2 |
| Application number | US-201113336561-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2011 |
| Priority date | Dec 28, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A solar cell includes a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer: and a front electrode electrically connected to the emitter layer by penetrating the antireflection layer. The front electrode includes a finger line and a busbar electrode electrically connected to the finger line, and the busbar electrode includes at least a first electrode line and a second electrode line electrically connected to each other. The first and second electrode lines have a width same as or larger than a width of the finger line, and the first and second electrode lines have the width of 100 μm or less.
First claim
Opening claim text (preview).
What is claimed is: 1. A solar cell, comprising: a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer; and a front electrode electrically connected to the emitter layer by penetrating through the antireflection layer, wherein the front electrode comprises a finger line and a busbar electrode electrically connected to the finger line, the busbar electrode compris…
Assignees
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Classifications
Electricity · mapped topic
- H10F77/211Primary
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
- H01L31/022425Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993876B2 cover?
- A solar cell includes a silicon semiconductor substrate; an emitter layer formed on a surface of the silicon semiconductor substrate; an antireflection layer formed on the emitter layer: and a front electrode electrically connected to the emitter layer by penetrating the antireflection layer. The front electrode includes a finger line and a busbar electrode electrically connected to the finger …
- Who is the assignee on this patent?
- Kwag Gyeayoung, Cho Haejong, Kwon Taeyoung, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10F77/211. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).