Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
Photoelectric conversion element
US8993869B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993869-B2 |
| Application number | US-201213422728-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2012 |
| Priority date | Mar 28, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
First claim
Opening claim text (preview).
What is claimed is: 1. A photoelectric conversion element comprising: a semiconductor layer having a p-type semiconductor layer and an n-type semiconductor layer to form a pn-junction; a long-wavelength absorption layer partially provided in the p-type semiconductor layer within a depth of 5 nm from a surface of the p-type semiconductor layer, the long-wavelength absorption layer containing an impurity different from impurities for p-type doping and n-type doping of the semicond…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F77/211Primary
Electricity · mapped topic
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- What does patent US8993869B2 cover?
- A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from eac…
- Who is the assignee on this patent?
- Fujimoto Akira, Nakanishi Tsutomu, Nakamura Kenji, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10F77/211. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).