Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Method of forming a material layer in a semiconductor structure
US8993459B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993459-B2 |
| Application number | US-201213601072-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2012 |
| Priority date | Aug 31, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.
First claim
Opening claim text (preview).
What is claimed: 1. A method, comprising: depositing a first portion of a first material layer on a semiconductor structure; performing a first run of a post-treatment process for modifying at least said first portion of said first material layer, wherein said post-treatment process comprises exposing said semiconductor structure to an oxidizing ambient, wherein a portion of said semiconductor structure adjacent said first material layer is oxidized during said first run of said…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993459B2 cover?
- A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same materia…
- Who is the assignee on this patent?
- Grass Carsten, Trentzsch Martin, Bayha Boris, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69215. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).