Method of manufacturing a semiconductor device including a stress relief layer
US-9218960-B2 · Dec 22, 2015 · US
Method of forming a dielectric film
US8993446B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993446-B2 |
| Application number | US-201313868412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 23, 2013 |
| Priority date | Apr 23, 2013 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a dielectric film comprising: depositing a flowable oxide on a semiconductor structure in a first phase having a first oxygen flow rate for a first time interval; depositing a flowable oxide on a semiconductor structure in a second phase having a second oxygen flow rate for a second time interval; depositing a flowable oxide on a semiconductor structure in a third phase having a third oxygen flow rate for a third time interval, wherei…
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Electricity · mapped topic
Electricity · mapped topic
- H10P14/6923Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993446B2 cover?
- A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for p…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6923. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).