Method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-8993439-B2
Application number	US-201414285969-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	Jun 19, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the mask layer; forming a damascene pattern by partially etching the damascene mask layer; forming a damascene mask layer on the mask layer pattern to bury the damascene pattern; forming a damascene pattern partially overlapping the damascene pattern by etching the damascene mask layer and the mask layer pattern; connecting the damascene pattern and the damascene pattern by removing a portion of the mask layer pattern exposed by the damascene pattern; forming a damascene mask layer on the damascene mask layer to bury the damascene pattern; and forming a trench under the damascene patterns by etching the damascene mask layers and the molding layer using remaining portions of the mask layer pattern.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a molding layer on a substrate;
sequentially forming a first damascene mask layer and a first mask layer on the molding layer;
forming a first mask layer pattern by etching the first mask layer;
forming a first damascene pattern by partially etching the first damascene mask layer using the first mask layer pattern as a mask;
forming a second damascene mask layer on the f…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Yong-Jun
• Lee Kil-Ho
• Kim Ki-Joon
• Son Myoung-Su

Classifications

• H10W20/084 Primary

  Electricity · mapped topic

• H10W20/01 Primary

  Electricity · mapped topic

• H10D64/011

  Electricity · mapped topic

• H01L21/76807 Primary

  Electricity · mapped topic