Method for etching substrate

Patent metadata

Field	Value
Publication number	US-8993437-B2
Application number	US-201113282491-A
Country	US
Kind code	B2
Filing date	Oct 27, 2011
Priority date	Oct 27, 2011
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.

First claim

What is claimed is:

1. A method of making a semiconductor structure, comprising:
forming a patterned metallic layer over a semiconductor substrate;
after forming the patterned metallic layer, coating said patterned metallic layer with a coating layer;
etching said semiconductor substrate; and
separating said substrate into a plurality of individual pieces.

2. The method of claim 1 , further including forming a barrier layer over said substrate before f…

Assignees

• Engelhardt Manfred
• Infineon Technologies Ag

Inventors

• Engelhardt Manfred

Classifications

• H10P54/00

  Electricity · mapped topic

• H10P50/692

  Electricity · mapped topic

• H10P50/695 Primary

  Electricity · mapped topic

• Y10S438/95

  Cross-Sectional Technologies · mapped topic

• H01L21/78

  Electricity · mapped topic