Interlayer conductor structure and method

Patent metadata

Field	Value
Publication number	US-8993429-B2
Application number	US-201314045573-A
Country	US
Kind code	B2
Filing date	Oct 3, 2013
Priority date	Mar 12, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

To form an interconnect conductor structure, a stack of pads, coupled to respective active layers of a circuit, is formed. Rows of interlayer conductors are formed to extend in an X direction in contact with landing areas on corresponding pads in the stack. Adjacent rows are separated from one another in a Y direction generally perpendicular to the X direction. The interlayer conductors in a row have a first pitch in the X direction. The interlayer conductors in adjacent rows are offset in the X direction by an amount less than the first pitch. Interconnect conductors are formed over and in contact with interlayer conductors. The interconnect conductors extend in the Y direction and have a second pitch less than the first pitch.

First claim

What is claimed is:

1. A method of forming an interconnect conductor structure, comprising:
forming a stack of pads coupled to respective active layers of a circuit, the stack of pads having a first side;
forming interlayer conductors arranged in rows extending in an X direction in contact with landing areas on corresponding pads in the stack, adjacent rows being separated from one another in a Y direction generally perpendicular to the X direction, the interlayer conductors in…

Assignees

• Macronix Int Co Ltd

Inventors

• Chen Shih-Hung

Classifications

• H10W20/089

  Electricity · mapped topic

• H10W20/083 Primary

  Electricity · mapped topic

• H10W20/01

  Electricity · mapped topic

• H10W20/069 Primary

  Electricity · mapped topic

• H01L27/11575

  Electricity · mapped topic