Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof
US-2016379901-A1 · Dec 29, 2016 · US
Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process
US8993418B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993418-B2 |
| Application number | US-201013988436-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2010 |
| Priority date | Nov 19, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a doped mono-crystalline semiconductor layer on a substrate, the method comprising the following steps: A) providing a substrate having a face comprising a first zone of mono-crystalline semiconductor material and a second zone of insulating material; B) submitting the substrate to a doping atmosphere comprising gaseous dopant precursors and devoid of gaseous silicon or germanium precursors; C) submitting the substrate to…
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Electricity · mapped topic
Electricity · mapped topic
- H10P14/3246Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993418B2 cover?
- The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a …
- Who is the assignee on this patent?
- Destefanis Vincent, Loubet Nicolas, Commissariat Energie Atomique, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3246. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).