Display apparatus and method of manufacturing the same
US-2024419215-A1 · Dec 19, 2024 · US
Semiconductor optical device having an air media layer and the method for forming the air media layer thereof
US8993409B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993409-B2 |
| Application number | US-201213414944-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 8, 2012 |
| Priority date | Dec 9, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
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A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fabricating an air media layer within a semiconductor optical device providing a substrate, forming a GaN thin film, forming a sacrificial layer, forming the GaN thin film layer on the sacrificial layer and etching to form an air media layer, comprising: providing a substrate; forming a nitride-containing semiconductor on the substrate by using a metal-organic chemical vapor deposition method; forming a sacrificial layer on the nitride-conta…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/01Primary
Electricity · mapped topic
- H01L33/0095Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993409B2 cover?
- A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to r…
- Who is the assignee on this patent?
- Lu Tien-Chang, Huang Huei-Min, Kuo Hao-Chung, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/01. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).