FinFET structures having silicon germanium and silicon fins

Patent metadata

Field	Value
Publication number	US-8993399-B2
Application number	US-201313896930-A
Country	US
Kind code	B2
Filing date	May 17, 2013
Priority date	May 17, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pFET region of the structure includes silicon germanium fins. Such fins are formed by annealing the structure to mix a germanium containing layer with an adjoining crystalline silicon layer. The structure further includes an nFET region including silicon fins formed from the crystalline silicon layer. The germanium containing layer in the nFET region is removed to create a space beneath the crystalline silicon layer in the nFET region. An insulating material is provided within the space. The pFET and nFET regions are electrically isolated by a shallow trench isolation region.

First claim

What is claimed is:

1. A method comprising:
obtaining a structure comprising a bulk silicon substrate, an epitaxial layer comprising carbon doped silicon on the substrate, an epitaxial layer containing germanium on the carbon doped silicon layer, and a layer comprising crystalline silicon on the epitaxial layer containing germanium;
forming an isolation region on the structure electrically isolating a first region of the structure from a second region of the structure;
removin…

Assignees

• IBM

Inventors

• Cheng Kangguo
• Doris Bruce B
• Khakifirooz Ali
• Reznicek Alexander

Classifications

• H10P95/90

  Electricity · mapped topic

• H10P14/69215

  Electricity · mapped topic

• H10P14/2905

  Electricity · mapped topic

• H10W10/181

  Electricity · mapped topic

• H10W10/0148

  Electricity · mapped topic