Method to etch non-volatile metal materials
US-2015340603-A1 · Nov 26, 2015 · US
Pillar structure for memory device and method
US8993397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993397-B2 |
| Application number | US-201314011577-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 27, 2013 |
| Priority date | Jun 11, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A method of forming a memory device. The method provides a semiconductor substrate having a surface region. A first dielectric layer is formed overlying the surface region of the semiconductor substrate. A bottom wiring structure is formed overlying the first dielectric layer and a second dielectric material is formed overlying the top wiring structure. A bottom metal barrier material is formed to provide a metal-to-metal contact with the bottom wiring structure. The method forms a pillar structure by patterning and etching a material stack including the bottom metal barrier material, a contact material, a switching material, a conductive material, and a top barrier material. The pillar structure maintains a metal-to-metal contact with the bottom wiring structure regardless of the alignment of the pillar structure with the bottom wiring structure during etching. A top wiring structure is formed overlying the pillar structure at an angle to the bottom wiring structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor device having a memory device, comprising: providing a semiconductor substrate having a surface region; forming a first dielectric layer overlying the surface region of the semiconductor substrate; forming a first via within the first dielectric layer material; depositing a liner material within the first via; depositing a metal-containing material over and in contact with the liner material and filling the first v…
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Classifications
Electricity · mapped topic
- H01L45/1675Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993397B2 cover?
- A method of forming a memory device. The method provides a semiconductor substrate having a surface region. A first dielectric layer is formed overlying the surface region of the semiconductor substrate. A bottom wiring structure is formed overlying the first dielectric layer and a second dielectric material is formed overlying the top wiring structure. A bottom metal barrier material is formed…
- Who is the assignee on this patent?
- Crossbar Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1675. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).