Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers

Patent metadata

Field	Value
Publication number	US-8993395-B2
Application number	US-201313923704-A
Country	US
Kind code	B2
Filing date	Jun 21, 2013
Priority date	Apr 12, 2011
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor structure and method for forming dielectric spacers and epitaxial layers for a complementary metal-oxide-semiconductor field effect transistor (CMOS transistor) are disclosed. Specifically, the structure and method involves forming dielectric spacers that are disposed in trenches and are adjacent to the silicon substrate, which minimizes leakage current. Furthermore, epitaxial layers are deposited to form source and drain regions, wherein the source region and drain regions are spaced at a distance from each other. The epitaxial layers are disposed adjacent to the dielectric spacers and the transistor body regions (i.e., portion of substrate below the gates), which can minimize transistor junction capacitance. Minimizing transistor junction capacitance can enhance the switching speed of the CMOS transistor. Accordingly, the application of dielectric spacers and epitaxial layers to minimize leakage current and transistor junction capacitance in CMOS transistors can enhance the utility and performance of the CMOS transistors in low power applications.

First claim

What is claimed is:

1. A method of forming a semiconductor device, the method comprising the steps of:
providing a substrate;
forming gates disposed on the substrate and spaced at a distance from each other, wherein a first dielectric spacer is disposed on and adjacent to the gate;
forming one or more trenches in the substrate between each of the gates;
forming a second dielectric spacer disposed on and adjacent to the first dielectric spacer and the substrate between the ga…

Assignees

• IBM

Inventors

• Chidambarrao Dureseti
• Muralidhar Ramachandran
• Oldiges Philip J
• Ontalus Viorel

Classifications

• H10P50/695

  Electricity · mapped topic

• H10D86/01

  Electricity · mapped topic

• H10D84/0184

  Electricity · mapped topic

• H10D84/0167

  Electricity · mapped topic

• H10D84/0147

  Electricity · mapped topic