Micro-electromechanical system devices

Patent metadata

Field	Value
Publication number	US-8993394-B2
Application number	US-201213685684-A
Country	US
Kind code	B2
Filing date	Nov 26, 2012
Priority date	Jun 4, 2008
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor chip comprising MEMS devices, the method comprising:
forming a semiconductive layer over a substrate, the substrate comprising an oxide layer;
forming a first trench in the semiconductive layer, the first trench exposing the oxide layer;
forming an insulating material layer over a first sidewall and an opposite second sidewall of the first trench, the insulating material layer further formed at least partia…

Assignees

• Infineon Technologies Ag

Inventors

• Mueller Karlheinz
• Gruenberger Robert
• Winkler Bernhard

Classifications

• B81C2203/0742

  Operations & Transport · mapped topic

• B81C1/00246 Primary

  Operations & Transport · mapped topic

• B81B2201/0271

  Operations & Transport · mapped topic