Dielectric composition and electronic component
US-2016376198-A1 · Dec 29, 2016 · US
Method for manufacturing semiconductor device
US8993386B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993386-B2 |
| Application number | US-72008910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2010 |
| Priority date | Mar 12, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A manufacturing method of a semiconductor device comprising the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming an oxide semiconductor layer over the first insulating layer so that the oxide semiconductor layer overlaps with the first conductive layer; forming a second conductive layer over the oxide semiconductor layer;…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993386B2 cover?
- An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insula…
- Who is the assignee on this patent?
- Ohara Hiroki, Sasaki Toshinari, Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification C01G15/006. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).