Semiconductor device and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-8993384-B2
Application number	US-201313913511-A
Country	US
Kind code	B2
Filing date	Jun 9, 2013
Priority date	Jun 9, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A semiconductor device includes a fin structure, an isolation structure, a gate structure and an epitaxial structure. The fin structure protrudes from the surface of the substrate and includes a top surface and two sidewalls. The isolation structure surrounds the fin structure. The gate structure overlays the top surface and the two sidewalls of a portion of the fin structure, and covers a portion of the isolation structure. The isolation structure under the gate structure has a first top surface and the isolation structure at two sides of the gate structure has a second top surface, wherein the first top surface is higher than the second top surface. The epitaxial layer is disposed at one side of the gate structure and is in direct contact with the fin structure.

First claim

What is claimed is:

1. A fabrication method for a semiconductor device, comprising:
forming a fin structure, protruding from a surface of a substrate, wherein the fin structure comprises a top surface and two side surfaces;
forming an isolation structure to surround the fin structure;
forming a gate structure, overlaying the top surface and the two side surfaces of a portion of the fin structure, and covering a portion of the isolation structure;
after the step of forming th…

Assignees

• United Microelectronics Corp

Inventors

• Hung Yu-Hsiang
• Fu Ssu-I
• Chang Chung-Fu
• Chen Cheng-Guo
• Lin Chien-Ting

Classifications

• H10D86/215

  Electricity · mapped topic

• H10D86/011

  Electricity · mapped topic

• H10D84/0126

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic

• H10D62/832

  Electricity · mapped topic