Display device and method for fabricating the same
US-2024363819-A1 · Oct 31, 2024 · US
Thin-film transistor and method for manufacturing thin-film transistor
US8993383B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993383-B2 |
| Application number | US-201314130939-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 29, 2013 |
| Priority date | Jun 8, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a thin-film transistor, the method comprising: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, an etch-stopper layer comprising an organic material; forming a source electrode and a drain electrode that are opposed to each other, each of t…
Assignees
Inventors
Classifications
- H10D86/451Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/6704Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8993383B2 cover?
- A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above th…
- Who is the assignee on this patent?
- Panasonic Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D86/451. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).