Phase-change memory cell with mixed-material switchable region
US-2024196766-A1 · Jun 13, 2024 · US
US8993374B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993374-B2 |
| Application number | US-201213566375-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 3, 2012 |
| Priority date | Aug 3, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient.
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What is claimed is: 1. A method of forming a memory cell, comprising: forming a first electrode material coupled to a first conductive line; forming a phase change material gradient on the first electrode material, wherein a phase change material comprises a chemical gradient with an active material that actively changes between an amorphous state and a crystalline state that is formed at least partially by a predetermined selection of a plurality of different chemicals to be de…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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