Annealing for damage free laser processing for high efficiency solar cells
US-9214585-B2 · Dec 15, 2015 · US
Doping pattern for point contact solar cells
US8993373B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993373-B2 |
| Application number | US-201213464582-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2012 |
| Priority date | May 4, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas doped during the patterned implant receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In some embodiments, counterdoped lines are also used to reduce lateral series resistance of the majority carriers.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of creating a point contact solar cell, comprising: providing a substrate having a first conductivity; performing a blanket implant on a surface of said substrate with a species of a second conductivity, said second conductivity being opposite said first conductivity, so as to create a base of said first conductivity and an emitter of said second conductivity; performing a patterned implant of said surface of said substrate using a species of sa…
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Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F10/14Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993373B2 cover?
- Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas dope…
- Who is the assignee on this patent?
- Bateman Nicholas, Graff John, Varian Semiconductor Equipment
- What technology area does this patent fall under?
- Primary CPC classification H10F10/14. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).