Method of fabricating semiconductor device isolation structure
US-9224606-B2 · Dec 29, 2015 · US
US8993372B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993372-B2 |
| Application number | US-201213407731-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2012 |
| Priority date | Mar 1, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×10 8 W/cm 2 .
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What is claimed is: 1. A method for producing a semiconductor component, comprising: providing a monocrystalline semiconductor body having a first surface, a second surface lying opposite the first surface, a semiconductor component section of the semiconductor body and, adjacent thereto, a separating region of the semiconductor body, producing a polycrystalline semiconductor body region between the first and second surfaces in the semiconductor component section, wherein an ele…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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