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US-2024038804-A1 · Feb 1, 2024 · US
Method for manufacturing an opto-microelectronic device
US8993368B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993368-B2 |
| Application number | US-201214111458-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 11, 2012 |
| Priority date | Apr 14, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
Method for manufacturing a microelectronic device from a first substrate ( 10 ), including the production of at least one electronic component in the semi-conductor substrate after transferring the first substrate ( 10 ) onto a second substrate ( 20 ), characterized in that it comprises: a first phase carried out prior to the transfer, and including forming at least one pattern made of a sacrificial material in a layer of the first substrate ( 10 ), a second phase carried out after the transfer and including the substitution of the electronic component for the pattern.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing an opto-microelectronic device from a first semiconductor substrate, comprising the production of at least one electrode of a pixel after a transfer of the first semiconductor substrate onto a second substrate, the method comprising: a first phase carried out before the transfer and comprising: i) forming at least one pattern made of a sacrificial material in a layer formed in the first substrate surface, ii) a lateral de…
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Classifications
Physics · mapped topic
Electricity · mapped topic
- H10F39/026Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L27/14687Primary
Electricity · mapped topic
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- What does patent US8993368B2 cover?
- Method for manufacturing a microelectronic device from a first substrate ( 10 ), including the production of at least one electronic component in the semi-conductor substrate after transferring the first substrate ( 10 ) onto a second substrate ( 20 ), characterized in that it comprises: a first phase carried out prior to the transfer, and including forming at least one pattern made of…
- Who is the assignee on this patent?
- Rossini Umberto, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification H10F39/026. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).