Method for manufacturing semiconductor optical device

Patent metadata

Field	Value
Publication number	US-8993359-B2
Application number	US-201414149329-A
Country	US
Kind code	B2
Filing date	Jan 7, 2014
Priority date	Jan 8, 2013
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

A method for manufacturing a semiconductor optical device includes the steps of preparing a mold having an imprint pattern; forming a substrate product including a semiconductor layer; forming a first resin layer on the semiconductor layer; forming a diffraction grating pattern having periodic projections and recesses in the first resin layer using the mold, the projection of the diffraction grating pattern having a top portion and a base portion; changing a duty ratio of the diffraction grating pattern by dry-etching the first resin layer; forming a second resin layer on the first resin layer so as to cover the projection and the recess; removing the top portion by etching back the first and second resin layers; and selectively etching the first resin layer so as to have a reverse pattern to the diffraction grating pattern; and etching the semiconductor layer through the first resin layer.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor optical device, comprising the steps of:
preparing a mold having an imprint pattern including periodic projections and recesses;
forming a substrate product including a semiconductor layer that extends along a reference plane;
forming a first resin layer on the semiconductor layer;
forming a diffraction grating pattern having periodic projections and recesses in the first resin layer by transferring the imprin…

Assignees

• Sumitomo Electric Industries

Inventors

• Sakurai Kenji

Classifications

• H01S2301/176

  Electricity · mapped topic

• H01S5/2222

  Electricity · mapped topic

• H01S5/2081

  Electricity · mapped topic

• H01S5/1231 Primary

  Electricity · mapped topic

• H01S5/34306

  Electricity · mapped topic