Forming a partially silicided element
US-2024087886-A1 · Mar 14, 2024 · US
US8993354B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993354-B2 |
| Application number | US-201313841087-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | Sep 14, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Official abstract text for this publication.
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes heating a resistor pattern by scanning the resistor pattern with a first beam. The resistor pattern includes resistors, and a connection structure connecting the resistors in series. The resistors is arranged in matrix of two or more rows and two or more columns. The method includes further heating the resistor pattern by scanning the resistor pattern with a second beam having a different scan direction as that of the first beam.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device in a semiconductor wafer, the semiconductor device comprising a resistor pattern including a plurality of resistors provided in the semiconductor wafer and arranged in matrix of at least two rows and at least two columns, and a connection structure configured to connect the plurality of resistors in series, wherein the plurality of resistors includes a plurality of first resistors provided in a chip of the sem…
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