Fluorinated cycloalkene functionalized silicas
US-2016280725-A1 · Sep 29, 2016 · US
Halogenated organoaminosilane precursors and methods for depositing films comprising same
US8993072B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993072-B2 |
| Application number | US-201213622117-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2012 |
| Priority date | Sep 27, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p I wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 -C 10 alkyl, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; R 3 is selected from a branched C 3 -C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring.
First claim
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The invention claimed is: 1. A method for forming a dielectric film on at least one surface of a substrate by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one halogenated organoaminosilane precursor having the following Formula I: X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p I wherein X i…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993072B2 cover?
- Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p I wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is sel…
- Who is the assignee on this patent?
- Air Prod & Chem
- What technology area does this patent fall under?
- Primary CPC classification C07F7/12. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).