Air data probe corrosion protection
US-12071684-B2 · Aug 27, 2024 · US
US8993063B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993063-B2 |
| Application number | US-201113702497-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2011 |
| Priority date | Jun 8, 2010 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.
Opening claim text (preview).
What is claimed is: 1. A method of forming a silica film, comprising: exposing an organic substrate to a vapor of alkoxysilane at ambient pressure and at a temperature below 150 ° C. such that the alkoxysilane is adsorbed on the substrate; and then converting the adsorbed alkoxysilane into silica by exposure to water vapor and a catalyst at ambient pressure without exposure to plasma; wherein the alkoxysilane does not substantially react with water vapor in the ambient pressur…
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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