Low-temperature synthesis of silica

US8993063B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8993063-B2
Application numberUS-201113702497-A
CountryUS
Kind codeB2
Filing dateJun 8, 2011
Priority dateJun 8, 2010
Publication dateMar 31, 2015
Grant dateMar 31, 2015

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Abstract

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An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.

First claim

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What is claimed is: 1. A method of forming a silica film, comprising: exposing an organic substrate to a vapor of alkoxysilane at ambient pressure and at a temperature below 150 ° C. such that the alkoxysilane is adsorbed on the substrate; and then converting the adsorbed alkoxysilane into silica by exposure to water vapor and a catalyst at ambient pressure without exposure to plasma; wherein the alkoxysilane does not substantially react with water vapor in the ambient pressur…

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What does patent US8993063B2 cover?
An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.
Who is the assignee on this patent?
Aizenberg Joanna, Hatton Benjamin, Harvard College
What technology area does this patent fall under?
Primary CPC classification C23C16/402. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).