Density multiplication and improved lithography by directed block copolymer assembly
US-9183870-B2 · Nov 10, 2015 · US
US8993060B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993060-B2 |
| Application number | US-27379108-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2008 |
| Priority date | Nov 19, 2008 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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A method includes: providing a substrate having a plurality of chemically contrasted alignment features, and depositing a self-assembled material on at least a portion of the substrate, wherein the position and/or orientation of substantially spherical or cylindrical domains of the self-assembled material is directed by the alignment features, to form a nanostructure pattern, and wherein the period of the alignment features is between about 2 times and about 10 times the period of the spherical or cylindrical domains. An apparatus fabricated according to the method is also provided.
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What is claimed is: 1. A method comprising: applying a polymer brush layer to a substrate; coating the brush layer with a photoresist layer; patterning the photoresist layer with a regular dot pattern in a bit area and a non-regular servo pattern in a servo area using a lithography process; forming a first hard mask which covers the non-regular servo pattern in the servo area; depositing a block copolymer which self-assembles in the bit area to form curvilinearly shaped do…
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