Combinatorial screening of metallic diffusion barriers
US-2015338362-A1 · Nov 26, 2015 · US
Lanthanoid aluminate film fabrication method
US8992744B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8992744-B2 |
| Application number | US-201113192687-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 28, 2011 |
| Priority date | Apr 25, 2007 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO 3 ) and the other of which is made of aluminum oxide (Al 2 O 3 ). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating lanthanum aluminate film, the method comprising: holding within a vacuum chamber a first target comprising LaAlO 3 or a compound comprising aluminum, lanthanum and oxygen having a ratio of Al:La=7:33 and a second target comprising Al 2 O 3 or a compound comprising aluminum, lanthanum and oxygen having a ratio of Al:La=11:1; conveying a substrate into the vacuum chamber; introducing a sputtering gas into the vacuum chamber; and…
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Chemistry & Metallurgy · mapped topic
- C23C14/3464Primary
Chemistry & Metallurgy · mapped topic
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- What does patent US8992744B2 cover?
- A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO 3 ) and the other of which is made of aluminum oxide (Al 2 O 3 ). Then, transport and load a…
- Who is the assignee on this patent?
- Ino Tsunehiro, Takashima Akira, Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3464. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).