Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil

US8992725B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8992725-B2
Application numberUS-89483207-A
CountryUS
Kind codeB2
Filing dateAug 23, 2007
Priority dateAug 28, 2006
Publication dateMar 31, 2015
Grant dateMar 31, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with plasma. The main part of the plasma reactor is an array of RF antenna cells, which are deeply immersed into the interior of the working chamber. Each antenna cell has a ferromagnetic core with a heat conductor and a coil wound onto the core. The core and coil are sealed in the protective cap. Deep immersion of the antenna cells having the structure of the invention provides high efficiency of plasma excitation, while the arrangement of the plasma cells and possibility of their individual adjustment provide high uniformity of plasma distribution and possibility of adjusting plasma parameters, such as plasma density, in a wide range.

First claim

Opening claim text (preview).

The invention claimed is: 1. A plasma reactor with inductive excitation of plasma, comprising: a working chamber that can be sealed and evacuated and that is provided with working gas supply channels, and a working gas outlet port, the working chamber comprising a sidewall and a chamber top; a plurality of antenna cells immersed into the working chamber; and an RF power source connected to the antenna cells for generation of plasma in the working chamber; each antenna cell o…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8992725B2 cover?
The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with plasma. The main part of the plasma reactor is an array of RF antenna cells, which are deeply immersed into the interior of the working chamber. Each antenna cell has a ferromagnetic core with a heat conductor and a coil wound onto the cor…
Who is the assignee on this patent?
Godyak Valery, Mattson Tech Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/3211. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).