Extreme ultraviolet light generation chamber device and electronic device manufacturing method
US-2024241448-A1 · Jul 18, 2024 · US
US8992689B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8992689-B2 |
| Application number | US-201213408703-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 29, 2012 |
| Priority date | Mar 1, 2011 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.
Opening claim text (preview).
What is claimed is: 1. A method for removing halogen-containing residues from a substrate in a chamber, comprising: heating the substrate; exposing the substrate to reactive species generated by a plasma; raising a pressure in the chamber, in the presence of the plasma, after the plasma is generated; continuing to expose the substrate to reactive species, in the presence of the plasma, after raising the pressure; controlling the pressure in the chamber to below the pressur…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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