GST film thickness monitoring

Patent metadata

Field	Value
Publication number	US-8989890-B2
Application number	US-69717710-A
Country	US
Kind code	B2
Filing date	Jan 29, 2010
Priority date	Nov 7, 2008
Publication date	Mar 24, 2015
Grant date	Mar 24, 2015

Abstract

In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined.

First claim

What is claimed is:

1. A method, comprising:
storing a target thickness in a computer;
after storing the estimated or target thickness, polishing a first substrate having a layer of GST, the layer of GST disposed over an underlying layer;
during polishing, directing a non-polarized light beam onto the layer of GST, the nonpolarized light beam reflecting from the first substrate to generate a reflected light beam having an infra-red component;
during polishing, generating a sequence of measurements of intensity of a selected wavelength in the infra-red component, the selected wavelength being such that intensity values of the reflected light beam at the selected wavelength provide no local peaks or valleys across a thickness range of at least 500 A of GST that includes the target thickness and no intensity value for the selected wavelength corresponds to multiple thicknesses within the thickness range, wherein the intensity values are monotonic within the thickness range; and
in the computer, determining a time at which the sequence of measurements exhibits a predefined feature indicating a the target thickness of the layer.

2. The method of claim 1 , wherein the non-polarized light beam is a laser beam.

3. The method of claim 2 , wherein the laser beam has a wavelength of approximately 1.3 microns.

4. The method of claim 1 , wherein the non-polarized light beam comprises a broadband near infrared component.

5. The method of claim 1 , wherein the infra-red component of the reflected light beam is a near infra-red component.

6. The method of claim 1 , further comprising sorting the measurements into groups, each group associated with a different zone of a plurality of zones on the substrate, and for each zone determining a time at which the sequence of measurements from the associated group exhibits a predefined feature.

7. The method of claim 6 , wherein the zones comprise concentric radial zones.

8. The method of claim 6 , wherein polishing comprises polishing with a carrier head having a plurality of chambers to apply independently adjustable pressures to the plurality of zones on the substrate.

9. The method of claim 8 , wherein during polishing of the first substrate a first chamber of the plurality of chambers applies a first pressure to a first zone of the plurality of zones and a second chamber of the plurality of chambers applies a second pressure to a second zone of the plurality of zones.

10. The method of claim 9 , wherein determining a time at which the underlying layer is exposed for each zone comprises determining a first time for a first zone from the plurality of zones and determining a second time for a second zone from the plurality of zones.

11. The method of claim 10 , further comprising calculating at least one adjusted polishing pressure for the first chamber based on the first pressure, the first time and the second time.

12. The method of claim 1 , further comprising determining a time at which the underlying layer is exposed from the sequence of measurements.

13. The method of claim 1 , wherein determining a time at which the underlying layer is exposed comprises determining a time at which the sequence of measurements stabilizes.

14. The method of claim 13 , wherein determining a time at which the sequence of measurements stabilizes includes determining that a slope of a trace generated by the sequence of measurements remains within a predetermined range for a predetermined time period.

15. The method of claim 1 , wherein determining a time at which the underlying layer is exposed comprises determining a time at which the sequence of measurements has a peak or valley.

16. The method of claim 1 , wherein the thickness range is 1000 to 1700 Å.

17. A non-transitory computer-readable medium having stored thereon instructions, which, when executed by a processor, causes the processor to perform operations comprising:
storing s target thickness;
after storing the target thickness, during polishing, causing a light source to direct a non-polarized light beam onto a layer of GST on a substrate, the non-polarized light beam reflecting from the substrate to generate a reflected light beam having an infra-red component;
during polishing, receive a sequence of measurements of an intensity of a selected wavelength of the infra-red component of the reflected light beam, the selected wavelength being such that intensity values of the reflected light beam at the selected wavelength provide no local peaks or valleys across a thickness range of at least 500 A that includes the target thickness and no intensity value for the selected wavelength corresponds to multiple thicknesses within the thickness range, wherein the intensity values are monotonic within the thickness range; and
determining a time at which the sequence of measurements exhibits a predefined feature indicating a predetermined thickness of the layer.

Assignees

• Xu Kun
• Liu Feng
• Benvegnu Dominic J
• Swedek Boguslaw A
• Wang Yuchun
• Tu Wen-Chiang
• Karuppiah Laksh
• Applied Materials Inc

Inventors

• Xu Kun
• Liu Feng
• Benvegnu Dominic J
• Swedek Boguslaw A
• Wang Yuchun
• Tu Wen-Chiang
• Karuppiah Laksh

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• C01G9/00 Primary

  Compounds of zinc · CPC title

• H01L45/144

  Electricity · mapped topic

• B24B37/013

  Devices or means for detecting lapping completion · CPC title