Semiconductor nano/microlaser tuning by strain engineering
US-2016365705-A1 · Dec 15, 2016 · US
US8989232B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8989232-B2 |
| Application number | US-201313975205-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2013 |
| Priority date | Aug 23, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Methods, structures, devices and systems are disclosed for implementing compact (e.g., nanoscale) coaxial lasers with coaxial cavity geometries which can be used to construct various coaxial cavity lasers that can operate in single mode, at room-temperature, and produce continuous-wave lasing. The described laser systems can also operate at low-temperatures, and provide thresholdless lasing using a spectrally broadband semiconductor gain medium. The cavity of the compact lasers includes a central metal core and a hollow ring surrounding the central metal core, formed within a housing with an open terminal and a closed terminal. The open terminal is positioned to both receive pump light and output laser light, and the closed terminal includes a metal cap that encloses the central metal rod and one side of the hollow ring. The described nano cavities also include a ring-shaped gain medium section, and ring-shaped lower and upper plug sections.
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What is claimed is: 1. A laser based on a coaxial cavity, comprising: a metal housing including a central metal core and a hollow metal ring surrounding the central metal core, and a laser gain medium filled in a region surrounding the central metal core within the hollow metal ring to absorb pump light and produce an optical gain at a laser wavelength, the metal housing including an open terminal and a closed terminal, the open terminal configured to receive pump light for optica…
Electricity · mapped topic
Electricity · mapped topic
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