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Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
US8988935B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8988935-B2 |
| Application number | US-201213720232-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2012 |
| Priority date | Dec 22, 2011 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.
First claim
Opening claim text (preview).
The invention claimed is: 1. Method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense a…
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- G11C11/1675Primary
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8988935B2 cover?
- The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer h…
- Who is the assignee on this patent?
- Crocus Technology Sa
- What technology area does this patent fall under?
- Primary CPC classification G11C11/1675. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).