Low-voltage differential signal activity detector

US8988112B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8988112-B2
Application numberUS-201213616640-A
CountryUS
Kind codeB2
Filing dateSep 14, 2012
Priority dateSep 15, 2011
Publication dateMar 24, 2015
Grant dateMar 24, 2015

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Abstract

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An activity detector for a differential signal formed by two components may include a current source connected to a power supply line, and a first transistor has a drain being powered by the current source, and has a source that forms a first input terminal receiving a first component of the differential signal. A second transistor has a drain being powered by the current source, and has a source forms a second input terminal receiving the second component of the differential signal. A bias circuit applies a potential to the gates of the first and second transistors, establishing a balance condition where all the current from the current source is distributed between the two transistors when the first and second input terminal potential is equal to a threshold value. An activity indication terminal is taken from the drains of the first and second transistors.

First claim

Opening claim text (preview).

That which is claimed is: 1. An activity detector for a differential signal having first and second components, the activity detector comprising: a current source comprising an output transistor having a drain and configured to be coupled to a power supply line; a first transistor having a drain coupled to said current source, a source defining a first input terminal configured to receive the first component of the differential signal, and a gate; a second transistor having a…

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What does patent US8988112B2 cover?
An activity detector for a differential signal formed by two components may include a current source connected to a power supply line, and a first transistor has a drain being powered by the current source, and has a source that forms a first input terminal receiving a first component of the differential signal. A second transistor has a drain being powered by the current source, and has a sour…
Who is the assignee on this patent?
Bissane Fouad, Gicquel Hugo, St Microelectronics Grenoble 2
What technology area does this patent fall under?
Primary CPC classification G01R19/10. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).