Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Patent metadata

Field	Value
Publication number	US-8987798-B2
Application number	US-201414306792-A
Country	US
Kind code	B2
Filing date	Jun 17, 2014
Priority date	Aug 10, 2011
Publication date	Mar 24, 2015
Grant date	Mar 24, 2015

Abstract

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

First claim

What is claimed is:

1. A magnetic tunneling junction device comprising:
a first structure including a magnetic layer;
a second structure including
a first extrinsic perpendicular magnetization layer;
a second extrinsic perpendicular magnetization layer;
a first non-magnetic layer disposed on the first extrinsic perpendicular magnetization layer;
a second non-magnetic layer disposed on the second extrinsic perpendicular magnetization layer; and
a third non-magnetic layer disposed on the second non-magnetic layer.

2. The device of claim 1 , wherein the magnetic layer of the first structure comprises a ferromagnetic material.

3. The device of claim 2 , wherein the ferromagnetic material is at least one of CeFeB, CoFe, NiFe, CoFePt, CoFePd, CoFePd, CoFeCr, CoFeTb, CoFeGd or CoFeNi.

4. The device of claim 1 , wherein the first and second extrinsic perpendicular magnetization layer comprises CoFeB.

5. The device of claim 1 , wherein at least one of the first and second non-magnetic layers comprise at least one of Ta, Ti, U, Ba, Zr, Al, Sr, Hf, La, Ce, Sm, Mg, Th, Ca, Sc, or Y.

6. The device of claim 1 , wherein the third non-magnetic layer comprises at least one of Ru, Rh, Pd, Ag, Os, Ir, Pt, or Au.

7. The device of claim 1 , wherein the oxygen affinity of the third non-magnetic layer is less than the oxygen affinity of the second non-magnetic layer.

8. The device of claim 1 , wherein the first structure further comprises an exchange coupling layer disposed between two magnetization layers.

9. The device of claim 1 , further comprising a tunnel barrier layer between the first structure and the second structure.

10. The device of claim 9 , wherein the tunnel barrier layer is thicker than the second non-magnetic layer.

11. An electronic device, comprising:
a bus:
a wireless interface configured to transmit data to or receive data from a wireless communication network connected to the bus;
an I/O device connected to the bus;
a controller connected to the bus; and
a memory including a semiconductor device including the magnetic tunneling junction device of claim 1 , connected to the bus, configured to store command code to be used by the controller or user data.

12. A semiconductor memory device comprising:
a substrate;
a first structure including a magnetic layer, the first structure disposed on the substrate;
a tunnel barrier layer disposed on the first structure;
a second structure disposed on the tunnel barrier layer, the second structure including:
a first extrinsic perpendicular magnetization layer;
a second extrinsic perpendicular magnetization layer;
a first non-magnetic layer disposed on the first extrinsic perpendicular magnetization layer;
a second non-magnetic layer disposed on the second extrinsic perpendicular magnetization layer; and
a third non-magnetic layer disposed on the second non-magnetic layer, wherein the oxygen affinity of the third non-magnetic layer is less than the oxygen affinity of the second non-magnetic layer.

13. The device of claim 12 , wherein the magnetic layer of the first structure comprises a ferromagnetic material.

14. The device of claim 12 , wherein the ferromagnetic material is at least one of CeFeB, CoFe, NiFe, CoFePt, CoFePd, CoFePd, CoFeCr, CoFeTb, CoFeGd or CoFeNi.

15. The device of claim 12 , wherein the first and second extrinsic perpendicular magnetization layer comprises CoFeB.

16. The device of claim 12 , wherein at least one of the first and second non-magnetic layers comprise at least one of Ta, Ti, U, Ba, Zr, Al, Sr, Hf, La, Ce, Sm, Mg, Th, Ca, Sc, or Y.

17. The device of claim 12 , wherein the third non-magnetic layer comprises at least one of Ru, Rh, Pd, Ag, Os, Ir, Pt, or Au.

18. The device of claim 12 , wherein the first structure further comprises an exchange coupling layer disposed between two magnetization layers.

19. The device of claim 12 , wherein the second extrinsic perpendicular magnetization layer is in direct contact with the second non-magnetic layer.

Assignees

• Park Jeong Heon
• Lim Woo Chang
• Oh Se Chung
• Kim Young Hyun
• Park Sang Hwan
• Lee Jang Eun
• Samsung Electronics Co Ltd

Inventors

• Park Jeong Heon
• Lim Woo Chang
• Oh Se Chung
• Kim Young Hyun
• Park Sang Hwan
• Lee Jang Eun

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G06F13/16

  for access to memory bus (G06F13/28 takes precedence) · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic