Phase-change memory cell with mixed-material switchable region
US-2024196766-A1 · Jun 13, 2024 · US
Memory constructions
US8987698B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987698-B2 |
| Application number | US-201414503081-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2014 |
| Priority date | Oct 23, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.
First claim
Opening claim text (preview).
We claim: 1. A memory construction comprising a stack which includes a bottom electrically conductive material electrically coupled with a select device, a top electrically conductive material, and a plurality of bands between the top and bottom electrically conductive materials; the bands including chalcogenide bands alternating with non-chalcogenide bands; wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands; and wherein one or more…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L45/06Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8987698B2 cover?
- Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electr…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/06. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).