Semiconductor photocatalyst coated with graphitic carbon film and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-8987164-B2
Application number	US-201213708813-A
Country	US
Kind code	B2
Filing date	Dec 7, 2012
Priority date	Jul 19, 2012
Publication date	Mar 24, 2015
Grant date	Mar 24, 2015

Abstract

A semiconductor of which a substance such as a semiconductor photocatalyst is uniformly coated on the surface thereof with a graphitic carbon film and a method of fabricating the same are disclosed. According to the inventive method, a graphitic carbon film having a thickness of 1 nm or less is uniformly formed on the surface of the semiconductor by performing hydrothermal synthesis and pyrolysis on glucose, so as to keep the original structure crystallinity of the semiconductor photocatalyst to be a support of the carbon film.

First claim

What is claimed is:

1. A method of fabricating a semiconductor photocatalyst coated with a plurality of carbon films, comprising:
a first step of preparing a semiconductor photocatalyst to be coated with a plurality of carbon films;
a second step of introducing the semiconductor photocatalyst into a glucose aqueous solution and heat treating to form a gel phase containing glucose onto a surface of the semiconductor photocatalyst; and
a third step of heat treating the resultant of the second step to form the semiconductor photocatalyst coated with the plurality of carbon films,
wherein the semiconductor photocatalyst with the gel phase containing glucose formed thereof is dried at 60° C. to 70° C. for 12 or 24 hours in a vacuum oven to remove water remaining in the glucose, and
wherein the plurality of carbon films spaced apart from each other are coated on the surface of the semiconductor photocatalyst.

2. The method of claim 1 , wherein, in the first step, titanium dioxide (TiO 2 ) nanotubes are formed by an electro-metallurgical process and the titanium dioxide nanotubes are heat treated to change the phase thereof into an anatase crystalline structure.

3. The method of claim 1 , wherein, in the second step, heat treatment is performed at 160° C. to 180° C. for 4 to 5 hours in a vacuum oven.

4. The method of claim 1 , wherein, in the third step, heat treatment is performed at 650° C. to 750° C. for 3 hours under an argon atmosphere with a CVD (Chemical Vapor Deposition) device.

5. A semiconductor photocatalyst coated with a plurality of carbon films, comprising:
a nanotube layer formed by titanium dioxide (TiO 2 ) nanotubes having an anatase crystalline structure; and
a plurality of carbon films spaced apart from each other on the titanium dioxide nanotubes,
wherein the plurality of carbon films are formed by hydrothermally-synthesizing glucose, drying at 60° C. to 70° C. for 12 or 24 hours in a vacuum oven to remove the water remaining in the glucose, and heat treating.

6. The photocatalyst of claim 5 , wherein the carbon film has a graphitic structure of two layers or four layers.

Assignees

• Korea Advanced Inst Sci & Tech

Inventors

• Kang Jeung-Ku
• Lee Dong-Ki
• Han Kyu-Sung
• Shin Weon-Ho
• Lee Jung-Woo
• Choi Jung-Hoon
• Choi Kyung-Min
• Lee Yeob

Classifications

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10D62/10

  Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies · CPC title

• H01L21/0228 Primary

  Electricity · mapped topic

• H01L29/0603

  Electricity · mapped topic

• Y10S977/90

  having step or means utilizing mechanical or thermal property, e.g. pressure, heat · CPC title