Solar cell stack
US-2015340534-A1 · Nov 26, 2015 · US
US8987129B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987129-B2 |
| Application number | US-201213627481-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2012 |
| Priority date | Sep 26, 2012 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.
Opening claim text (preview).
We claim: 1. A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of: providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell lay…
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.