Semiconductor device and processes for making same
US-2024290783-A1 · Aug 29, 2024 · US
Method of manufacturing Schottky barrier diode
US8987124B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987124-B2 |
| Application number | US-201213649383-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2012 |
| Priority date | Nov 14, 2011 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
Official abstract text for this publication.
A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a Schottky barrier diode, comprising the steps of: preparing a silicon carbide substrate having a main face, forming an oxide film on said main face by applying thermal oxidation to said main face of said silicon carbide substrate at a first temperature, applying heat treatment to said silicon carbide substrate and said oxide film at a second temperature higher than the first temperature, after said step of forming an oxide film…
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- H10D8/051Primary
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8987124B2 cover?
- A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10D8/051. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).