Epitaxial growth of silicon for layer transfer

Patent metadata

Field	Value
Publication number	US-8987115-B2
Application number	US-200813059830-A
Country	US
Kind code	B2
Filing date	Aug 21, 2008
Priority date	Aug 21, 2008
Publication date	Mar 24, 2015
Grant date	Mar 24, 2015

Abstract

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

First claim

What is claimed is:

1. A method of preparing a crystalline silicon film comprising:
providing a non-porous, non-ion-implanted silicon growth substrate;
associating an interface defining substance which is not silicon with an exterior surface of the silicon growth substrate;
depositing at a low temperature an epitaxial layer of silicon on the exterior surface of the silicon growth substrate, wherein the low temperature is less than or equal to about 550° C.;
separating the ep…

Assignees

• Teplin Charles
• Branz Howard M
• Alliance Sustainable Energy

Inventors

• Teplin Charles
• Branz Howard M

Classifications

• H10P14/24

  Electricity · mapped topic

• H10P14/3411

  Electricity · mapped topic

• H10P14/2905

  Electricity · mapped topic

• H10P14/38

  Electricity · mapped topic

• H10P14/3238 Primary

  Electricity · mapped topic