Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
US8987016B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987016-B2 |
| Application number | US-201113816628-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2011 |
| Priority date | Aug 16, 2010 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.
Opening claim text (preview).
The invention claimed is: 1. A method for improving light emitting diode (LED) extraction efficiency, said method comprising: (a) providing a nano-rod light emitting diode comprising a nano-rod; (b) providing quantum wells having a quantum-well plane (x and y); and (c) reducing diameter of the nano-rod of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency. 2. The method of claim 1 , wherein the ex…
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